This study investigates experimentally the fundamentals of patterning polyaniline and SU-8 coating by photo-lithography. Spin coating, pre baking, exposure, post baking and development conditions were developed on glass slides as well as silicon wafers. However, surface roughness played a vital role in achieving proper adhesion over the glass substrate. The best result was obtained on silicon wafers. Various combinations of solvents and polyaniline were tried in order to obtain excellent patterned structures on the substrate. Even SU-8-10 as well as SU-8-100 was tried in various experiments. Some excellent results were obtained when photo-initiator (Triarylsulfonium hexafluoro-anitimonate salts) was used as solvent with SU-8-100 and GBL (gamma-butyrolactone) in terms of patterning. A new process was developed to pattern polyaniline using positive lithography. Lift-off gave excellent results which comprised of features on the substrate as well as conductivity.